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  E-mail Message: I thought you might be interested in this item at http://pcc.worldcat.org/oclc/191818482 Title: Breakdown phenomena in semiconductors and semiconductor devices Author: M E Levinshteĭn; Juha Kostamovaara; Sergey Vainshtein Publisher: New Jersey ; London : World Scientific, ©2005. ISBN/ISSN: 9812563954 9789812563958 9812703330 9789812703330 OCLC:191818482

  
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Subjects

• Semiconductors.
• Breakdown (Electricity)
• High voltages.
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Breakdown phenomena in semiconductors and semiconductor devices

Author:	M E Levinshteĭn; Juha Kostamovaara; Sergey Vainshtein
Publisher:	New Jersey ; London : World Scientific, ©2005.
Series:	Selected topics in electronics and systems, v. 36.
Edition/Format:	eBook : Document : EnglishView all editions and formats
Summary:	Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi.  Read more...